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用P型单层WSe₂场效应晶体管的低电阻接触器进行扩展兴奋剂

Sihan Chen¹, Yue Zhang², William P King^1,2,3,4

¹Holonyak Micro and Nanotechnology Laboratory, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States.

Advanced electronic materials

|August 8, 2025

概括

这项研究引入了一种用于使用烯化 (WSe2) 染二维半导体场效应晶体管 (FET) 的新方法. 这种技术可以在单层WSe2p-FET中实现低电阻接触和高性能,而不会损坏材料.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
半导体物理半导体物理

背景情况:

源/排水延伸注对于将先进的互补金属氧化物半导体 (CMOS) 技术的场效应晶体管 (FET) 的电阻降至最低至关重要.
像二硫化物 (MoS2) 和二化物 (WSe2) 这样的二维 (2D) 半导体对下一代CMOS设备具有前景.
一个重大挑战在于实现有效的延伸兴奋剂2D单层FET,而不会导致材料降解.

研究的目的:

展示一种用于单层WSe2 p-FETs的扩展兴奋剂的方法.
为了在2D FET中实现低阻力接触和高性能.
开发在2D材料中无损的纳米尺度选择性区域兴奋剂的策略.

主要方法:

利用自我限制的氧化方法将双层WSe2转化为WOxSey/WSe2异质二层.
采用无损 nanolithography 来定义一个无毒的纳米通道.
在接触点下面插入无形WOxSey中间层,以减少接触电阻.

主要成果:

实现了单层WSe2 (1.2±0.3 kΩ μm在10^13 cm^-2) 的创纪录的低接触电阻.
证明了一种WOxSey-doped延伸,具有10±1 kΩ □^-1.的低板电阻.
单层WSe2p-FETs具有50nm以下的通道,其最大排水电流为154μA μm^-1和开/关比为10^7-10^8.

结论:

开发的方法使单层WSe2p-FETs的有效延伸注和低电阻接触成为可能.
这种方法保留了高开电流,同时显著改善了开/关比.
这项工作为2D FET和其他2D电子架构中纳米尺度选择性兴奋剂提供了可行的策略.

关键词:

这就是WSe2Se2.接触层之间的接触层.接触电阻接触电阻接触电阻扫描探头石版扫描探头选择性区域兴奋剂的使用.短频道短频道短频道 oxyselenide 是一种的氧化.

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