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Updated: Sep 11, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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设计和制造4个双输入NAND门芯片,具有出色的电气和物理性能

Lijun Zhang1,2,3,4, Wenqiang Dang5,6, Yu Lu7

  • 1School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, China. zhanglj_81@tsnu.edu.cn.

Scientific reports
|August 12, 2025
PubMed
概括

本研究介绍了为航空航天应用设计的增强4个双输入NAND门芯片. 这些改进的芯片在恶劣环境中提供了卓越的性能,证明了对苛刻条件的先进能力.

关键词:
这是一个反-latch-up-up.电流特征 电流特征 DC 的特征动态特征 动态特征 动态特征保护ESD保护ESD保护辐射电阻对辐射的抵抗.

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