长波长红外传感器阵列使用在可见的GaN LED上制造的VO2微结构

长波长红外传感器阵列使用在可见的GaN LED上制造的VO2微结构

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Minhyeok Shin¹, Anh Thi Dieu Nguyen², Taenam Kwon¹

¹Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

Scientific reports

|August 12, 2025

概括

这项研究将二氧化瓦纳 (VO2) 与化 (GaN) 发光二极管 (LED) 结合起来,创建了一个新的红外传感器. 该设备通过将电阻变化转换为可见光辐射来光学检测温度变化.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
红外传感器红外传感器红外传感器

背景情况:

二氧化瓦纳 (VO2) 呈现出一种金属到绝缘体的转变,这对于热传感至关重要.
基于化 (GaN) 的发光二极管 (LED) 提供高效的光辐射来读出.
整合这些材料可以导致新的光电子传感器应用.

研究的目的:

通过将VO2微结构阵列与基于GaN的LED集成来开发长波长红外传感器阵列.
为了使温度诱导的电阻变化直接转化为可见光辐射.
为了创建一个低电压,个别可定位的红外传感异构结构.

主要方法:

与InxGaN1-xLED集成的VO2微结构阵列的制造.
使用基于GaN的LED作为VO2/LED异构结构的读出单元.
描述VO2层的均性和金属到绝缘体的过渡行为.

主要成果:

这种VO2/LED异构结构成功地将温度诱导的电阻变化转化为可见光辐射.
由于均的VO2特性,在所有像素中观察到一致的金属到绝缘体过渡行为.
实现了2.5V的低压操作,LED亮度与VO2电阻变化成反比例.
可以单独定位的像素允许光学检测温度变化,包括方向和程度.

结论:

开发的VO2/LED异构结构作为一个有效的长波长红外传感器阵列.
温度变化的光学读取是可行的,提供了一个新的传感机制.
个别可定位的像素可以实现定向和定量热检测.

关键词:

博洛米特是一个博洛米特.发光二极管是一种发光二极管.长波长的红外线 - 红外线半导体中化物半导体氧化瓦纳的氧化物

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