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Updated: Sep 11, 2025

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设计和分析0.36 NA中央遮光极紫外线目标系统

Shuai Wang, Xianxing Chen, Xinhuai Xu

|August 12, 2025

概括

这项研究引入了一种新的0.36 NA极紫外线光刻 (EUVL) 系统,该系统可减少冲击角度以提高成像性能. 与当前的0.33 NA系统相比,这种新的设计提高了超过26%的光传输.

科学领域:

光学工程是指光学工程.
纳米技术纳米技术
半导体制造业半导体制造业

背景情况:

普遍存在的0.33 NA无障碍极紫外线光刻 (EUVL) 系统在M5处遭受高冲击角度,降低成像和能量传输.
在当前的EUVL目标系统中,这些大的冲击角度对涂层性能产生了重大影响.

研究的目的:

开发一个创新的0.36 NA EUVL目标系统,降低平均发射角度.
提高涂层EUVL目标的成像性能和能量传输.
为EUVL系统设计提供一种新的优化算法.

主要方法:

设计了一个新的0.36 NA EUVL目标系统,以最大限度地减少平均撞击角度.
采用基因自适应粒子群混合有效集算法 (GA-APSO-Aset) 进行初始结构搜索和优化.
在整个视野 (FOV) 中评估波面偏差.

主要成果:

在全FOV.中实现了低于1/60λ (λ=13.5nm) 的全面波面偏差.
与传统的0.33 NA系统相比,经涂层后的平均光传输增强率超过26%.
该GA-APSO-资产算法成功优化了系统,而不需要一个起点.

结论:

新的0.36 NA EUVL系统有效地减轻了与高发射角度相关的问题.
该设计为EUVL涂层和目标系统的综合设计提供了一个战略方法.
开发的优化算法为设计先进光学系统提供了强大的方法.

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