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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
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源优化方法采用高NAEUVL的动态极化偏差模型.

Zhaoxuan Li, Miao Yuan, Zhen Li

    Applied optics
    |August 12, 2025
    PubMed
    概括

    本研究介绍了极紫外线光刻 (EUVL) 扫描系统的动态极化偏差模型. 这种新型号提高了图像质量,并减少了高数值光圈EUVL系统中的模式错误.

    科学领域:

    • 光学工程是指光学工程.
    • 半导体制造业 半导体制造业
    • 计算式 lithography 的使用方法.

    背景情况:

    • 扫描光刻系统容易受到极化偏差 (PAs) 的影响,这些偏差因视野 (FOV) 中的位置而有所不同.
    • 现有的极端紫外线光刻 (EUVL) 计算光刻模型经常忽略这些动态的PAs,影响成像准确性,特别是在高数值光圈 (NA) 系统中.
    • 这种监督导致优化结果不足,并降低了高级EUVL应用中的图像质量.

    研究的目的:

    • 专门为NA0.55 EUVL系统开发一个动态极化偏差 (PA) 模型.
    • 提出并验证一种源优化 (SO) 方法,该方法结合了这种动态PA模型来提高成像质量.
    • 解决当前模型的局限性,这些模型忽略了扫描诱导的极化变化.

    主要方法:

    • 通过在扫描方向沿着FOV点采样,建立了NA0.55 EUVL的动态PA模型.
    • 在不同的采样点进行了计算的光刻图像,并考虑了PAs在每个点的影响.
    • 实现了对抗的代暴露模拟,整合了动态PA模型.
    • 开发了一个基于动态PA模型的源优化策略.

    主要成果:

    • 提出的源优化 (SO) 方法有效地将模式错误减少了15.5%至28.2%.

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  • 通过实施的SO战略,工艺窗口显著扩大了15.0%至22.2%.
  • 实验验证证了动态PA模型在改善 lithographic 结果方面的有效性.
  • 结论:

    • 动态极化偏差显著影响扫描EUVL系统的成像质量,特别是在高NA时.
    • 开发的动态PA模型和随后的源优化方法提供了一个切实可行的解决方案来减轻这些影响.
    • 这种方法提高了模式忠实性和过程稳定性,这对于先进的半导体制造至关重要.