直接晶圆结合的数值和机械分析,考虑到不均的不纯度粒子分布
Feixiang Tang1,2, Siyu He3, Yuhan Li2
1School of Microelectronics, Hefei University of Technology, Hefei, China.
Microsystems & nanoengineering
|August 12, 2025
概括
直接晶圆粘合将半导体晶圆连接到没有粘合剂的半导体晶圆,这对微电子非常重要. 杂质分布显著影响粘合质量,表面杂质对应变能产生最大影响.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体制造业 半导体制造业
- 纳米技术纳米技术
背景情况:
- 直接晶圆粘合是制造集成电路,微电机系统 (MEMS) 和多功能芯片的关键技术.
- 评估晶圆粘合质量至关重要,芯片偏移和应变能量是重要的指标.
- 在结合过程中存在的杂质可以显著降低债券的质量.
研究的目的:
- 调查各种杂质分布对晶圆粘合质量的影响.
- 开发和验证用于分析晶圆结合的数学和有限元模型.
- 为了解杂质如何影响晶圆粘合性能提供理论框架.
主要方法:
- 开发一个用于晶圆粘合的数学模型.
- 创建一个有限元模型来模拟晶圆粘合.
- 分析不同的杂质分布 (集群,复杂,面,直线) 以及它们对应变能量的影响.
主要成果:
- 晶圆曲率,厚度和杂质分布共同影响压力下的拉伸能量.
- 杂质颗粒的表面分布证明对晶圆粘合质量产生了最显著的影响.
- 有限元模拟证实了开发的数学模型的准确性.
结论:
- 杂质的分布是决定直接晶圆粘合质量的关键因素.
- 表面杂质分布对粘合性能产生最重要的影响.
- 经过验证的模型提供了一个理论基础,通过控制杂质效应来优化晶圆粘合过程.
相关概念视频
Crystal Density
The crystal lattice structure of a material allows us to determine how many molecules exist in its unit cell. With this information, alongside the unit-cell parameters - three distance parameters (a, b, c) and three angular parameters (α, β, γ).Density (ρ) = (Z × M) / (a × b × c × NA)where:Z is the number of formula units per unit cellM is the molar mass of the substancea, b, and c are the edge lengths of the unit cellNA is Avogadro’s numberFor a simple cubic lattice, atoms are located only at...
Imperfections in Crystal Structure: Point, Line and Plane Defects
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...


