通过优化结构参数来提高带有GaN基板的微LED的光学和电气性能

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Updated: Sep 11, 2025

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
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In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

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Shan Huang, Yibo Liu, Feng Feng

    Optics express
    |August 13, 2025
    PubMed
    概括

    优化化 (GaN) 基板微型发光二极管 (微型LED) 涉及调整结构参数. 电子阻断层中的较低含量和较短的量子井周期提高了效率和亮度.

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