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相关概念视频

Unsymmetric Bending - Angle of Neutral Axis01:15

Unsymmetric Bending - Angle of Neutral Axis

Unsymmetrical bending occurs when a structural member is subjected to bending moments in a plane that does not align with the member's principal axes. This scenario typically arises in beams and other structural components when loads are applied at non-ideal angles, introducing complexities in stress analysis.
When a bending moment is applied at an angle θ concerning the vertical axis of a symmetrical member, it can be resolved into components along the member's principal centroidal axes. The...
Design of Prismatic Beams for Bending01:23

Design of Prismatic Beams for Bending

The design of prismatic beams, structural elements with a uniform cross-section, focuses on ensuring safety and structural integrity under load. The design process begins by determining the allowable stress, either from material properties tables, or by dividing the material's ultimate strength by a safety factor. This safety factor is essential for accommodating uncertainties, and varies depending on the material—timber, steel, or concrete—with each having unique strength and stress...

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相关实验视频

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紧的深槽辅助曲在SiN平台上,用于单体集成激光.

Ziyao Zhang, Ilias Skandalos, Rui Ma

    Optics express
    |August 13, 2025
    PubMed
    概括

    研究人员开发了一种新的化 (SiN) 曲结构,使用深度蚀刻槽. 这一创新大大减少了光子集成电路 (PIC) 的曲半径和损失,使得更紧的设计成为可能.

    科学领域:

    • 材料科学 材料科学 材料科学
    • 光子学是指光子学的使用方法.
    • 集成光学 集成光学 集成光学

    背景情况:

    • 光子集成平台需要微米级的被动层,以及单体集成光源的III-V层.
    • 低温等离子增强化学蒸气沉积 (PECVD) 化 (SiN) 适用于后端线 (BEOL) 集成,因为其无形结构允许厚厚的,无缺陷的层.
    • 优化的SiN波导是厚的和肋状的,但曲会遭受高辐射损失,需要小型光子集成电路 (PIC) 的大曲半径 (800微米).

    研究的目的:

    • 为了应对紧型PIC的厚SiN波导曲线中高辐射损失的挑战.
    • 引入和演示一种新的SiN曲结构,可以显著降低曲半径和相关损失.
    • 研究结合这些新曲结构的微环共振器 (MRR) 的性能.

    主要方法:

    • 一个新的SiN曲结构的制造,在外侧有一道深深的蚀刻槽.
    • 新型SiN结构的曲损失和最小曲半径的表征.
    • 研究使用深蚀刻槽曲结构的紧型MRR.

    主要成果:

    • 新的SiN曲结构实现了显著减少的37微米的曲半径.
    • 证明的曲损失低至0.1dB/90°.
    • 与标准的肋带波导MRR相比,具有深切蚀刻槽的MRR显示了增强的自由光谱范围 (FSR) 和39.1GHz的传输带.

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    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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    结论:

    • 新型深蚀槽SiN曲结构大大降低了光子集成电路中的曲半径和损失.
    • 这一进步使得可以创建更紧的PIC.
    • MRR 和波导的性能提升为单个基板上的紧集成发射器铺平了道路.