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Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
Published on: March 20, 2015
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概括
研究人员开发了一种新的化 (SiN) 曲结构,使用深度蚀刻槽. 这一创新大大减少了光子集成电路 (PIC) 的曲半径和损失,使得更紧的设计成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 光子学是指光子学的使用方法.
- 集成光学 集成光学 集成光学
背景情况:
- 光子集成平台需要微米级的被动层,以及单体集成光源的III-V层.
- 低温等离子增强化学蒸气沉积 (PECVD) 化 (SiN) 适用于后端线 (BEOL) 集成,因为其无形结构允许厚厚的,无缺陷的层.
- 优化的SiN波导是厚的和肋状的,但曲会遭受高辐射损失,需要小型光子集成电路 (PIC) 的大曲半径 (800微米).
研究的目的:
- 为了应对紧型PIC的厚SiN波导曲线中高辐射损失的挑战.
- 引入和演示一种新的SiN曲结构,可以显著降低曲半径和相关损失.
- 研究结合这些新曲结构的微环共振器 (MRR) 的性能.
主要方法:
- 一个新的SiN曲结构的制造,在外侧有一道深深的蚀刻槽.
- 新型SiN结构的曲损失和最小曲半径的表征.
- 研究使用深蚀刻槽曲结构的紧型MRR.
主要成果:
- 新的SiN曲结构实现了显著减少的37微米的曲半径.
- 证明的曲损失低至0.1dB/90°.
- 与标准的肋带波导MRR相比,具有深切蚀刻槽的MRR显示了增强的自由光谱范围 (FSR) 和39.1GHz的传输带.
结论:
- 新型深蚀槽SiN曲结构大大降低了光子集成电路中的曲半径和损失.
- 这一进步使得可以创建更紧的PIC.
- MRR 和波导的性能提升为单个基板上的紧集成发射器铺平了道路.
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