Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Measurements of Strain01:27

Measurements of Strain

2.1K
Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain...
2.1K

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

The interaction of Gα13 with integrin β1 mediates cell migration by dynamic regulation of RhoA.

Molecular biology of the cell·2015
Same author

Overcoming difficulty in diagnosis and differential diagnosis of Crohn's disease: the potential role of serological and genetic tests.

Expert review of molecular diagnostics·2015
Same author

The presence of primary sclerosing cholangitis in patients with ileal pouch anal- anastomosis is associated with an additional risk for vitamin D deficiency.

Gastroenterology report·2015
Same author

Perioperative Blood Transfusion and Postoperative Outcome in Patients with Crohn's Disease Undergoing Primary Ileocolonic Resection in the "Biological Era".

Journal of gastrointestinal surgery : official journal of the Society for Surgery of the Alimentary Tract·2015
Same author

Postoperative Fluid Overload is a Useful Predictor of the Short-Term Outcome of Renal Replacement Therapy for Acute Kidney Injury After Cardiac Surgery.

Medicine·2015
Same author

Intranuclear biophotonics by smart design of nuclear-targeting photo-/radio-sensitizers co-loaded upconversion nanoparticles.

Biomaterials·2015

相关实验视频

Updated: Sep 11, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.1K

来自应变缓解散体InGaN活性区域的红色排放.

Zuojian Pan, Zhizhong Chen, Haodong Zhang

    Optics express
    |August 13, 2025
    PubMed
    概括

    这项研究证明了使用在更高温度下培养的新型散装化 (InGaN) 活性区域的红色LED. 这种方法提高了波长稳定性,并为红色InGaN发光二极管 (LED) 提供了新的表轴策略.

    科学领域:

    • 材料科学 材料科学 材料科学
    • 固态物理 固态物理
    • 光电学是指光电子产品.

    背景情况:

    • 传统的红色发光二极管 (LED) 使用在低温下培养的化 (InGaN) 量子井 (QW) 进行有效的合.
    • 从InGaN材料中获得高效的红光发射通常需要特定的生长条件来管理含量和相位分离.

    研究的目的:

    • 为了演示红色LED使用大量的InGaN活性区域,而不是传统的量子井.
    • 研究一种新的表轴策略,用于制造具有改进特性的红色InGaNLED.

    主要方法:

    • 大量InGaN活跃区域在约800°C时生长,明显高于典型的红色QW生长温度.
    • 在底层的绿色多量子井 (MQW) 中引入了高密度的沟结构,以缓解散体InGaN.的压缩应变.
    • 在电注下分析了由此产生的InGaN材料结构和光学特性.

    主要成果:

    • 由于沟结构,在散装的InGaN层中实现了大约96%的应变松.
    • 在大量的InGaN中观察到低In (蓝色) 和高In (红色) 阶段的相分离,红色阶段充当载体定位中心.
    • 证明红色LED具有卓越的波长稳定性 (在电流范围内从648.6nm到642.4nm的最小转移) 和0.32%的峰值外部量子效率.

    更多相关视频

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    14.0K
    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
    10:31

    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

    Published on: November 24, 2016

    8.7K

    相关实验视频

    Last Updated: Sep 11, 2025

    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
    07:50

    Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

    Published on: July 17, 2015

    11.1K
    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
    11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

    14.0K
    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
    10:31

    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

    Published on: November 24, 2016

    8.7K

    结论:

    • 开发的表轴策略使红色InGaNLED可以使用在高温下生长的散装活性区域来制造.
    • 通过沟结构的应变放松有效地促进相位分离,从而产生高效的红光发射.
    • 这种方法为生产稳定高效的红色InGaNLED提供了一种可行且新的替代方案.