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Updated: Sep 11, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

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来自应变缓解散体InGaN活性区域的红色排放

Zuojian Pan, Zhizhong Chen, Haodong Zhang

    Optics express
    |August 13, 2025
    PubMed
    概括

    这项研究证明了使用在更高温度下培养的新型散装化 (InGaN) 活性区域的红色LED. 这种方法提高了波长稳定性,并为红色InGaN发光二极管 (LED) 提供了新的表轴策略.

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    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope11:14

    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

    Published on: May 28, 2016

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    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors10:31

    Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

    Published on: November 24, 2016

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    相关概念视频

    Measurements of Strain01:27

    Measurements of Strain

    Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain...
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