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Updated: Sep 11, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Published on: October 23, 2018

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首次实现与边缘接触的α-In2Se3铁电半导体场效应晶体管及其应用于人工异质突触的应用

Jong-Hyun Kim1, Seung-Hwan Kim2, Euyjin Park3

  • 1Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea.

Small (Weinheim an der Bergstrasse, Germany)
|August 13, 2025
PubMed
概括

本研究介绍了α-In2Se3铁电半导体场效应晶体管 (FeS-FET) 的边缘接触配置. 这种新的设计通过优化Schottky屏障高度和保存铁电,显著提高了内存性能.

关键词:
费米级别的固定方式人工突触是一种人造突触.边缘接触 - 接触铁电半导体 铁电半导体印度化的化.

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