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Updated: Jul 21, 2026

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压力对AgInGaSe2薄膜的特性的影响及其应用于太阳能电池中的应用

Xianfeng Zhang1, Engang Fu2, Yong Lu3

  • 1Guangzhou College of Technology and Business, Sanshui Compus, Foshan 528137, China.

Nanomaterials (Basel, Switzerland)
|August 13, 2025
PubMed
概括

在AgInGaSe2 (AIGS) 太阳能电池制造过程中优化压力是关键. 较高的Se压力提高了粒径和结晶度,从而提高了AIGS太阳能电池的性能和效率.

关键词:
在AgInGaSe2太阳能电池中.转换效率的转换效率是什么在的压力下.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...