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在MoS₂ FET中使用Phonon辅助的电荷捕获和值电压调节,使用AlO_xN_y覆盖层

Sangwoo Nam¹, Hanyeol Ahn¹, Beomjin Park²

¹Department of Physics, University of Seoul, Seoul 02504, Republic of Korea.

ACS applied materials & interfaces

|August 13, 2025

概括

一个新的氧化 (AlO_xN_y) 覆盖层使在室温下MoS₂场效应晶体管 (FET) 中的兴奋剂和值电压歇斯底里成为可能. 这种材料促进了电荷交换,并为神经形态计算应用提供了潜力.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
半导体物理半导体物理

背景情况:

多层MoS₂场效应晶体管 (FET) 对于下一代电子设备至关重要.
在MoS₂FET中控制兴奋剂和值电压仍然是一个挑战.
现有的介电材料往往需要高温加工.

研究的目的:

为了研究反应喷射的氧化 (AlO_xN_y) 覆盖层对MoS₂ FET特征的影响.
探索AlO_xN_{y作为2DFET的低温介电体的潜力.}
了解歇斯底里背后的机制及其对设备功能的影响.

主要方法:

在多层MoS2上对AlO_xN_y覆盖层进行室温反应喷雾.
制造和表征MoS₂ FETs与AlO_xN_y的介电.
电容电压测量和取决于温度的电/光谱分析.

主要成果:

AlO_xN_y能够在MoS₂FET中实现有效的兴奋剂和明显的值电压歇斯底里,而不会影响机动性.
在AlO_xN_y中加入,可降低固定电荷密度,使得不需要回火的可移动性维护操作.
歇斯底里斯在250K以上显著膨胀,与MoS₂外平面声子激活和界面陷状态相关.

结论:

AlO_xN_y是一个有前途的2D FET低温介电体,提供可调节的歇斯底里.
以Phonon辅助的接口电荷调制为设备控制提供了一个新的机制.
观察到的hysteresis对于新兴的应用,如内存计算和神经形态系统是有益的.

关键词:

在MoS2中,MoS2就是MoS2.兴奋剂的使用兴奋剂的使用这是歇斯底里症.接口互动的接口互动.神经形态计算是一种神经形态计算.语音语音语音语音温度依赖性温度依赖性陷状态陷状态陷状态

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