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Updated: Jun 12, 2026

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化学蚀刻对无电 Ni-B 涂料超容性能的影响

Mate Czagany1, Gabor Meszaros2, Daniel Koncz-Horvath1

  • 1Institute of Physical Metallurgy, Metal Forming and Nanotechnology, University of Miskolc, Miskolc-Egyetemvaros, 3515 Miskolc, Hungary.

Materials (Basel, Switzerland)
|August 14, 2025
PubMed
概括

这项研究通过调整酸蚀刻来优化- (Ni-B) 超级电容电极. 最佳蚀刻实现了157mF/cm2的高特异电容,为先进的储能应用展示了稳定的性能.

关键词:
酸蚀刻 酸蚀刻是一种酸蚀刻.一个循环的生命周期.没有电的Ni-B.孔隙结构是多孔结构.伪容量是一种伪容量.超级电容器是一个超级电容器.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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