红外探测器应用的高质量HgCdSe的增长
Zekai Zhang1, Wenwu Pan1, Gilberto A Umana Membreno1
1Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009, Australia.
Materials (Basel, Switzerland)
|August 14, 2025
概括
为红外探测器培养了高质量的HgCdSe材料,显示了下一代设备的潜力. 虽然性能目前低于HgCdTe,但HgCdSe提供了成本和格式优势.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 半导体物理 半导体物理
背景情况:
- HgCdTe是用于红外探测器的标准.
- HgCdSe是一个潜在的替代材料.
- 开发新材料对于先进的红外探测至关重要.
研究的目的:
- 为了研究高晶质HgCdSe.Se的生长.
- 制造和描述第一个基于HgCdSe的中波红外探测器.
- 评估HgCdSe作为HgCdTe的替代品的潜力.
主要方法:
- 在GaSb (211) B基板上的分子束化 (MBE) 增长.
- 优化MBE生长参数,包括基板热清洁.
- 使用XRD对材料质量进行表征,并在77K时评估探测器性能.
主要成果:
- 实现了高质量的HgCdSe,记录XRD FWHM的~65弧秒.
- 已证明HgCdSe n型材料的少数载体寿命为~1.19 μs,移动性为~1.6 × 104 cm2/Vs.
- 制造的HgCdSe光电导体具有4.2μm的切线波长和高峰检测能力为~1.2 × 109cmHz1/2/W在77K.
结论:
- HgCdSe显示出下一代红外探测器的巨大潜力.
- 该材料在成本和大面积基板兼容性方面具有优势.
- 需要进一步优化,以匹配最先进的HgCdTe探测器的性能.
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