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一种基于多变量线性回归的结点温度预测方法,使用SiC MOSFETs当前下降特征

Haihong Qin1, Yang Zhang1, Yu Zeng2

  • 1College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.

Sensors (Basel, Switzerland)
|August 14, 2025
PubMed
概括

准确估计碳化物 (SiC) MOSFET连接温度 (Tj) 是至关重要的. 本研究引入了一种使用关闭电流下降时间和下降损失的新方法,用于精确监测功率电子中的Tj.

关键词:
状态监控 状态监控 状态监控目前下降的能量损失下降的能量损失.当前下降时间 当前下降时间交叉点温度 交叉点温度温度敏感的电气参数 (TSEP)

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