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Updated: Jul 9, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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下一代电化学蚀刻用于III-化物半导体:创新,应用,以及其他方面

Ramesh Kumar Raji1, Naser Qamhieh1, Adel Najar1

  • 1Department of Physics, College of Science, United Arab Emirates University, Al-Ain, Abu Dhabi, P. O. Box 15551, United Arab Emirates. saleh.thaker@uaeu.ac.ae.

Nanoscale
|August 14, 2025
PubMed
概括

电化学蚀刻 (ECE) 精确地纳米结构了GaN等III-化物半导体,为光电子和气体传感器创造了增强的纳米线. 这种方法可以提高设备的性能和传感能力.

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相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...