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Updated: Sep 11, 2025

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在高电阻对比度的化聚变体之间从晶体到晶体相变的过程

Joonho Kim1, Kihyun Lee1, Joong-Eon Jung1

  • 1Department of Physics, Yonsei University, Seoul 03722, Korea.

ACS nano
|August 18, 2025
PubMed
概括

化 (GeSe) 的相位过渡是相位变化记忆的关键. 这项研究揭示了Ge空缺推动了从导电性γ-GeSe到半导体α-GeSe的转型,显示了电子应用的潜力.

关键词:
在 GeSe GeSe 的位置上阶段过渡 阶段过渡阶段变换材料的相变材料.它是多元形态的.传输电子显微镜的使用

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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