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基于HfO2的压电薄膜的结构,性能和应用

Yong Huang¹, Wenbin Tang², Xiao Xu²

¹College of Science, Jinling Institute of Technology, Nanjing 211169, China. rgbush@163.com.

|August 18, 2025

概括

金属合氧化 (HfO2) 薄膜对铁电记忆器和压电器件有很大的前景. 原子层沉积使它们能够与先进电子的微电子机械系统 (MEMS) 集成.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
纳米技术纳米技术

背景情况:

标记为Hf1-xA_xO2的金属合氧化 (HfO2) 超薄膜正在成为先进电子应用的关键材料.
这些材料具有显著的铁电特性,使它们对非易失性记忆的发展具有吸引力.

研究的目的:

为了研究金属合HfO2膜的压电特性.
探索这些薄膜在各种能量转换设备中的潜力及其与微电子机械系统 (MEMS) 制造的兼容性.

主要方法:

使用原子层沉积 (ALD) 的高质量,大尺寸Hf1-xA_xO2膜的生长.
在≤500°C的温度下进行的回火工艺,与CMOS后端线 (BEOL) 制造兼容.

主要成果:

Hf1-xA_xO2膜表现出强烈的压电性,直接压电系数 (d33) 超过37 pC N-1.
长轴应变和偏振切换允许对逆压电系数从正值调整为负值.
ALD 能够在低温下制造这些薄膜,与 MEMS 技术保持一致.

结论:

Hf1-xA_xO2压电薄膜适用于制造执行器,共振器和传感器.
将MEMS/NEMS设备与使用这些薄膜的CMOS芯片集成,可以提高操作速度和数据收集.
这项研究为先进的电子系统开辟了新的途径,使压电功能与集成电路的无集成成为可能.

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