p-dopant使

Zhongquan Wan1, Wang Yu1, Jinyu Yang1

  • 1National Key Laboratory of Electronic Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China 611731 Chengdu P. R. China zqwan@uestc.edu.cn luojs@uestc.edu.cn cyjia@uestc.edu.cn.

Chemical science
|August 18, 2025
PubMed
概括

一种新的非离子化p-dopant,PFB-TFSI,通过取代有问题的Li-TFSI/t-BP系统来提高矿太阳能电池 (PSC) 的性能和稳定性. 这种新型剂提高了孔载层的效率和防潮性.