,

Yen-Chun Chen1, Ran Hao1, Adam Thompson1

  • 1Department of Electrical, Computer, and Systems Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA.

IEEE sensors letters
|August 18, 2025
PubMed
概括

这项研究引入了一种MRI安全的力传感器,该传感器使用在横向光束上的霍尔效应传感器. 它通过检测磁流密度变化,准确地测量3特斯拉MRI扫描仪内的力.

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