剪流对Sm-C^{*}液晶电极化的影响
K Anaswara Das1, Przemysław Kula2, Michał Czerwiński2
1University of Hyderabad, School of Physics, Hyderabad-500046, India.
Physical review. E
|August 19, 2025
概括
这项研究揭示了剪切流如何影响铁电Smectic-C*液晶极化. 我们发现了不同的模式,其中极化增加,和,然后随着剪切率的增加而减少.
科学领域:
- 材料科学 材料科学 材料科学
- 软物质物理学 软物质物理学
- 液晶是一种液晶.
背景情况:
- 铁电式的Smectic-C* (SmC*) 液晶表现出电极化.
- 通常,偏振是在静态的,封闭的样本中测量.
- 像剪流这样的动态条件的影响仍然不太了解.
研究的目的:
- 为了研究剪流对SmC*液晶电极化的影响.
- 识别和描述在剪切下极化反应的不同模式.
- 了解剪流,电场和涂层方向之间的相互作用.
主要方法:
- 使用流体计,对SmC*液晶样品应用受控的切割速率.
- 测量电极化反应作为应用剪切速率的函数.
- 在剪切和电场相结合下分析涂料层的方向.
主要成果:
- 在切割速率依赖的极化中观察到三种不同的模式.
- 在低切割速率下,极化迅速增加.
- 在中间切割速率下,极化和,而在高切割速率下,则减少.
结论:
- 剪流显著改变了SmC*液晶的电极化.
- 观察到的模式归因于涂层方向的变化.
- 这项工作为铁电液晶的电神经行为提供了新的见解.
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