外部电场对共化学机械抛光的影响:反应分子动力学的研究
Cheng Huang1, Min Zhong1, Wenhu Xu1
1School of Advanced Manufacturing, Jiangxi Key Laboratory of Light Alloy, Key Laboratory of Tribology, Nanchang University, Nanchang, Jiangxi330031, China.
Langmuir : the ACS journal of surfaces and colloids
|August 20, 2025
概括
电化学机械抛光 (ECMP) 使用电场来改进集成电路的制造. 应用电场可以增强材料的移除,并减少基板损坏,特别是在较高的负载下.
科学领域:
- 材料科学与工程
- 表面科学
- 计算材料科学
背景情况:
- (Co) 是10nm以下的先进集成电路 (IC) 的一个有前途的连接金属,因为它具有较低的电阻,粘附和热稳定性.
- 化学机械抛光 (CMP) 对于IC制造中的表面平整至关重要.
- 电化学机械抛光 (ECMP) 与传统的CMP相比具有潜在的进步.
研究的目的:
- 通过使用电场进行电化学机械抛光 (ECMP) 时,研究 (Co) 的反应机制.
- 为了阐明吸附原子的行为,Co去除模式,以及负荷和电场的联合效应.
- 了解电场如何影响共抛光质量和基板损伤.
主要方法:
- 使用ReaxFF反应分子动力学模拟.
- 在不同电场强度和机械负荷下进行电化学抛光 (ECMP).
- 分析了表面电荷分布,原子移除机制和地下损伤.
主要成果:
- 吸附H2O层会影响Co表面电荷;电场会改变H2O结构和Co原子电荷.
- 通过磨损相互作用去除共原子,而被去除的原子可能有助于进一步去除.
- 电场增强了碳的去除,并抑制了地下损伤,特别是在更高的负载下 (例如0.1 V/Å和40 GPa).
结论:
- 这项研究揭示了Co ECMP的关键机制,强调了电场和机械负荷的协同效应.
- 在最佳的ECMP条件下 (0.1 V/Å电场,40 GPa压力) 可以在最小的基板损伤下有效地去除材料.
- 这些发现为下一代IC制造提供了更深入的了解.
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