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在温度影响下变形的Sb2Te3半导体的结合和缺陷演变机制

Runxi Jia1, Qianqiu Liu1, Xinlei Gao1

  • 1Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062, China.

The journal of physical chemistry. A
|August 20, 2025
PubMed
概括

Telluride (Sb2Te3) 半导体的可塑性是热电器件的关键. 动态范德瓦尔斯键和缺陷决定了这种可塑性,较低的温度提高了结构完整性和变形耐受性.

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