适用于恶劣辐射环境的大规模补充碳纳米管集成电路
Ke Zhang1,2, Daming Zhou1, Ningfei Gao3,4
1School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
Science advances
|August 22, 2025
概括
碳纳米管 (CNT) 提供耐辐射的电子产品. 这项研究表明,大型补充性CNT场效应晶体管 (CNTFET) 在辐射后保持性能,使其在恶劣环境中具有潜在的替代性.
科学领域:
- 材料科学
- 电气工程
- 纳米技术
背景情况:
- 集成电路需要对辐射环境进行复杂的硬化,导致性能问题.
- 碳纳米管 (CNT) 具有适用于高性能,耐辐射电子产品的固有特性.
- 制造方面的挑战限制了使用CNT场效应晶体管 (CNTFET) 的宏电子设备的开发.
研究的目的:
- 展示用于宏电子应用的耐辐射补充CNTFET的制造.
- 评估基于CNTFET的逻辑门和环振荡器在辐射暴露下的性能.
- 评估CNTFET在辐射密集环境中的替代晶体管的潜力.
主要方法:
- 使用CNTFET制造耐辐射,高度对称和均的CMOS构件.
- 不同阶段的各种逻辑门 (逆变器,NAND,XOR) 和环振荡器 (RO) 的实现 (5,11,501).
- 用于测试辐射耐受性,对已制造的设备辐射高达6 Mrad (Si).
主要成果:
- 所有制造的CNTFET设备在辐射到6Mrad (Si) 后都保持了轨道对轨道输出.
- 一个由1004个CNTFET组成的501级环振荡器显示出最小的延迟变化 (10.3 ± 0.8 ns).
- 证明了大型CNTFET电路的辐射耐受性.
结论:
- 大规模的补充CNTFET具有耐辐射性,并保持稳定的运行.
- 在辐射重的应用中,CNTFET具有很大的潜力来取代基于的场效应晶体管.
- 这项工作为在恶劣环境中使用先进电子设备铺平了道路.
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