相关实验视频

Updated: Sep 10, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

6.4K

在过渡金属二甲基异构体中操纵闪的莫伊雷三子

Guan-Yao Huang1,2,3, Weihao Cheng4,5, Xiao-Jie Wang4

  • 1MIIT Key Laboratory of Complex-Field Intelligent Exploration, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.

Nano letters
|August 23, 2025
PubMed
概括

研究人员使用moiré电位控制了2D材料中的电荷转移. 这种对过渡金属二基 (TMD) 异构结构中随机层间电荷转移的操纵,为管理激发行为开辟了新的途径.

关键词:
收费转移光闪不同结构更多的潜力过渡金属二甲基化物三角形

更多相关视频

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
331