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半导体表面的异常光电化学蚀刻

Pan Peng1,2,3, Xinqin Liu1,2,3, Shuming Yang4

  • 1State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, China.

Nature communications
|August 23, 2025
PubMed
概括

半导体的异常蚀刻是由光梯度驱动的, 不仅仅是强度. 这一发现为先进材料提供了新的3D纳米制造技术.

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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