在SrTiO3缓冲Si(001) 上培养的BaBiO3-δ薄膜的结构转化,由现场分子束表冷却过程诱导
Islam Ahmed1,2, Olivier Richard2, Partrick Carolan2
1Department of Materials Engineering, KU Leuven, Leuven, Belgium.
概括
控制 bismuthate (BaBiO3-δ) 薄膜中的氧气空缺非常重要. 在冷却或回火过程中提供活性氧气会改变结构,产生高质量的矿薄膜.
科学领域:
- 材料科学
- 固态化学
- 薄膜沉积
背景情况:
- 氧气损失是矿材料的常见缺陷,通常源于合成过程中的低氧压.
- 乙硫酸 (BaBiO3-δ) 薄膜容易形成氧空隙,影响其结构和电子特性.
研究的目的:
- 研究在Si001) 基板上培养的BaBiO3-δ薄膜中控制氧气空缺的方法.
- 通过减轻生长期间和生长后的氧气损失来实现所需的矿结构.
主要方法:
- 在SrTiO3-缓冲Si(001) 基板上进行薄膜沉积的分子束表 (MBE).
- 控制的冷却过程与激活的氧气供应.
- 在分子氧气中进行现场火.
- 使用传输电子显微镜 (TEM),拉曼光谱,光发光 (PL) 和X射线衍射 (XRD) 的表征.
主要成果:
- 通过在冷却过程中或通过现场回火进行扩展的活性氧供应,可以成功地获得BaBiO3的矿结构.
- 结构转换得到了TEM,拉曼和PL的证实,显示了重建的八面体.
- XRD显示了矿阶段的较小的外平面格子常数.
- 来自Si基板的拉伸应变被确定为推动氧气空缺的关键因素.
结论:
- 通过在生长后处理过程中仔细控制氧的部分压力,可以实现BaBiO3-δ的结构转化为矿阶段.
- 优化的冷却或回火策略对于制造高质量的BaBiO3薄膜而言是必不可少的.
- 对于上矿薄膜的缺陷工程来说,了解基层诱导的应变作用至关重要.
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