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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

505
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
505
Metallic Solids02:37

Metallic Solids

18.7K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
18.7K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

331
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
331
Properties of Transition Metals02:58

Properties of Transition Metals

27.1K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
27.1K
Crystal Field Theory - Octahedral Complexes02:58

Crystal Field Theory - Octahedral Complexes

27.4K
Crystal Field Theory
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
27.4K
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

44.1K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
44.1K

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相关实验视频

Updated: Sep 8, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.3K

在CRI3/WTe2基的异构结构中强大的高移动性半金属接口状态

Nivedita Pandey1, Oscar Grånäs1

  • 1Department of Physics and Astronomy, Uppsala University, SE-751 20 Uppsala, Sweden.

ACS applied materials & interfaces
|August 26, 2025
PubMed
概括

我们在CRI3/2H-WTe2异构结构中发现了一个强大的半金属接口,实现了100%的自旋偏振和超过10%的磁阻,用于先进的自旋电子和数据存储.

科学领域:

  • 凝聚物质物理学
  • 材料科学
  • 量子工程

背景情况:

  • 范德瓦尔斯 (vdW) 异构结构提供可调节的电子特性.
  • 半金属材料对于自旋应用至关重要.
  • 二化物 (WTe2) 和三化物 (CrI3) 是有希望的二维材料.

研究的目的:

  • 为了研究 CrI3/2H-WTe2 vdW异构的电子和传输特性.
  • 探索这种异构结构在旋转和旋转热量装置中的潜力.
  • 在不同的磁性和热条件下模拟电荷和自旋传输.

主要方法:

  • 密度函数理论 (DFT) 的计算.
  • 非平衡格林函数 (NEGF) 模拟.
  • 使用 CrO2 电极进行设备建模.

主要成果:

  • 确定了一个强大的半金属接口状态,具有100%的旋转极化.
  • 观察到超出1%的超常电磁阻 (MR).
  • 在低温下证明了近乎完美的旋转过效率.
  • 实现了高热电阻 (MR),适用于旋转热电阻.
关键词:
1T′和2H阶段二氧化碳/二氧化碳/二氧化碳装置旋转过效率取决于温度的自旋电流传输频谱道磁电阻 (TMR)

更多相关视频

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K

相关实验视频

Last Updated: Sep 8, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.3K
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K

结论:

  • CrI3/2H-WTe2异构表现出特殊的旋转过和MR特性.
  • 这个系统是下一代数据存储和旋转器件的有希望的候选者.
  • 这些发现突显了热控制的旋转和旋转热量应用的潜力.