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Updated: Sep 10, 2025

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在新半导体材料Ba2.75Pb1.1Sb4.1Se10中使用Te的半导体转化

Swati1, Subhendu Jana1, Sayani Barman1

  • 1Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India. jaiprakash@chy.iith.ac.in.

Dalton transactions (Cambridge, England : 2003)
|August 26, 2025
PubMed
概括

合成了新的半导体抗氧化,Ba2.75Pb1.1Sb4.1Se10-δTeδ. 替代增强了电导率和热电性能,达到了0.09的zT值.

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