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Updated: Sep 10, 2025

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通过蒸汽相合成工艺进行可扩展的介电工程,用于顶端MoS₂薄膜晶体管

Seohak Park¹, Mingu Kang¹, Inseong Lee¹

¹School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.

Small (Weinheim an der Bergstrasse, Germany)

|August 26, 2025

概括

使用启动化学蒸汽沉积 (iCVD) 的新缓冲层策略改善了物联网 (IoT) 设备的二维半导体集成. 这种方法提高了二硫化 (MoS2) 晶体管的性能和稳定性.

科学领域:

材料科学
电气工程
纳米技术

背景情况:

在物联网 (IoT) 设备中,二维 (2D) 半导体是下一代薄膜晶体管 (TFT) 的关键.
由于惰性表面,将高k介电与MoS2等二维材料集成是具有挑战性的,导致接口缺陷和性能问题.

研究的目的:

在二维半导体上开发一个可扩展的高k介电集成策略.
改进基于MoS2的晶体管的接口质量和电气特性.

主要方法:

使用启动化学蒸汽沉积 (iCVD) 在MoS2和HfO2之间沉积超薄的聚1,3,5-三甲基-1,3,5-三环三氧化 (pV3D3).
设计了一个重叠的顶端门结构, 以尽量减少接触阻力.

主要成果:

在MoS2上均形成的pV3D3缓冲层,防止了针孔和集群.
实现了抑制HfO2诱导的注和陷形成,从而产生接近理想的切换 (SS为60.9 mV/dec),低歇斯底里 (≈20 mV) 和低接口陷密度 (8.9 × 10^10 cm^-2 eV^-1).
证明了高性能,I_ON/I_OFF比率大于10^8,场效应移动性 (μ_FE) 为19.2 cm^2 V^-1 s^-1,SS_min为80.6 mV/dec^-1.

结论:

基于ICVD的介电工程是一种可扩展和有效的高性能二维电子的方法.
验证了灵活的MoS2晶体管和逻辑电路的方法,显示了大面积应用的潜力.

关键词:

2D半导体其他类型灵活的电子设备最后一个过程 iCVD 过程薄膜晶体管

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