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Updated: Sep 10, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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在量子点中超过99.9%的高准确度几何量子门

Yu-Chen Zhou1,2, Rong-Long Ma1,2, Zhenzhen Kong3,4

  • 1Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.

Nature communications
|August 26, 2025
PubMed
概括

我们在量子点中展示了高保真度量子比特控制. 几何量子计算显著提高了噪声弹性,实现了超过99%的可靠量子操作.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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