了解银半海斯勒热电模块的取决于工作温度的界面行为
Hailong He1, Haoyun Jiang1, Chunping Niu1
1State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, P. R. China.
ACS applied materials & interfaces
|August 27, 2025
概括
半海斯勒 (hH) 合金是有前途的热电材料. 长期稳定性测试显示,在hH/Ag接口上的Sn扩散会导致超过550°C的故障,限制设备的操作温度.
科学领域:
- 材料科学
- 固态物理
- 热电器
背景情况:
- 半斯勒 (hH) 合金具有出色的热稳定性和机械性能,使其适用于中高温热电应用.
- 尽管具有潜力,但基于hH的设备的长期老化特征和故障机制尚未得到充分证实.
研究的目的:
- 综合分析由p型Hf_{0.5}$Zr_{0.5}$CoSb_{0.8}$Sn_{0.2}$和n型Hf_{0.75}$Zr_{0.25}$NiSn_{0.99}$Sb_{0.01}$纯的老化热电臂的故障机制.
- 确定这些hH TE装置的长期稳定性能的操作温度极限.
主要方法:
- 在各种高工作温度下对老化 TE 臂样本进行实验分析.
- 分子动力学 (MD) 模拟以验证接口形态演变和理解元素扩散原理.
主要成果:
- 在hH/Ag界面观察到锡 (Sn) 的严重扩散,随温度增加.
- 在低于550°C的温度下,样品保持稳定性长达672小时 (4周).
- 在600°C以上,Sn扩散到银 (Ag) 层中,形成低点的Ag-Cu-Sn相,导致毛孔,裂和设备故障.
结论:
- 研究hH臂样本的长期稳定运行上限约为550°C.
- 在超过550°C的温度下,接口上的锡扩散是主要的故障机制.
- 这些发现为设计和应用基于hH的热电装置提供了关键指导,以确保可靠的高温操作.
更多相关视频
09:09Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
Published on: February 5, 2020
7.0K
04:09Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
Published on: August 30, 2024
437
相关概念视频
Metal-Semiconductor Junctions
506
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
506
Biasing of Metal-Semiconductor Junctions
331
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
331
Thermal expansion and Thermal stress: Problem Solving
1.3K
San Francisco's Golden Gate Bridge is exposed to temperatures ranging from -15 °C to 40 °C. At its coldest, the main span of the bridge is 1275 m long. Assuming that the bridge is made entirely of steel, what is the change in its length between these temperatures?
To solve the problem, first, identify the known and unknown quantities. The initial length (L) of the bridge is 1275 m, the coefficient of linear expansion (α) for steel is 12 x 10-6/°C, and the change in...
To solve the problem, first, identify the known and unknown quantities. The initial length (L) of the bridge is 1275 m, the coefficient of linear expansion (α) for steel is 12 x 10-6/°C, and the change in...
1.3K
