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在热处理的Ni/Si双层中,低能碳离子辐射诱导的相位演变

Khushboo Shah¹, Ratnesh Pandey¹, Devarani Devi²

¹Department of Physics, School of Advanced Engineering, UPES Dehradun 248001 India santosh.dubey@ddn.upes.ac.in.

|August 27, 2025

概括

低能碳离子辐射显著改变了热化双层中的化相. 这项研究调查了先进材料应用的辐射下相位演变和稳定性.

科学领域:

材料科学
表面科学
离子束的修改

背景情况:

- (Ni/Si) 双层对于微电子互连和接触至关重要.
了解化阶段形成和稳定性是设备可靠性的关键.
离子辐射对薄膜的影响需要详细研究.

研究的目的:

研究低能碳离子辐射对热化Ni/Si双层的影响.
在辐射下分析化相的形成,演化和稳定性.
了解碳离子辐射引起的结构变化.

主要方法:

通过磁喷射制造Ni/Si双层.
在500°C的温度下进行热,以核化化相.
在120 keV的碳离子辐射中,流动度为3 × 10^15和1 × 10^16离子/cm2.
使用放牧发射X射线衍射 (GIXRD),传输电子显微镜 (TEM) 和拉瑟福反射光谱 (RBS) 的表征.

主要成果:

碳离子辐射在经过热和未经热的Ni/Si样本中引起了显著的结构变化.
TEM分析证实了辐射造成的结构变化.
研究了特定的化阶段及其在辐射下的演变.

结论:

低能碳离子辐射是修改化相的一种可行的方法.
辐射会影响化薄膜的稳定性和结构.
进一步的研究可以通过受控的离子辐射来探索量身定制的材料特性.

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