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Updated: Sep 10, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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基于二维1T-VSe2和旋转对齐的h-BN单层的范德瓦尔斯磁接

Qiaoxuan Zhang1,2, Cong Wang3, Wenjie Wang4

  • 1Department of Electrical Engineering and Automation, Hebei University of Water Resources and Electric Engineering, Cangzhou 061001, China.

Nanomaterials (Basel, Switzerland)
|August 27, 2025
PubMed
概括

在范德瓦尔斯磁结 (MTJ) 中扭转六角化物 (h-BN) 绝缘层会大大改变它们的性能. 这种扭转角度工程允许对旋转器件中道磁阻 (TMR) 的比率进行显著控制.

关键词:
一个T-VSe2磁道连接点转角工程范德瓦尔斯

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