在原型Mott-Anderson过渡中绘制不洁带的移位
M Parzer1, F Garmroudi2, A Riss1
1Technische Universität Wien, Institute of Solid State Physics, 1040 Vienna, Austria.
Physical review letters
|August 27, 2025
概括
研究人员通过调整铁含量来调整Fe-V-Al海斯勒化合物的电荷传输. 他们观察到从局部到非局部电子状态的过渡,实现了电子应用的温度独立电阻.
科学领域:
- 凝聚物质物理
- 材料科学
- 固态化学
背景情况:
- 控制固体中的电荷传输对于电子来说至关重要.
- 污染和混乱往往会阻碍连贯的传导.
研究的目的:
- 控制来自杂质状态的电子带的形成.
- 在Fe-V-Al海斯勒化合物中研究电荷载体的定位和移位.
主要方法:
- 密度功能理论 (DFT) 的计算.
- 特定热和电阻的测量.
- 热电测量
主要成果:
- 降低铁含量可以控制来自杂质状态的带积累.
- 在低V度 (0
- 随着V度的增加,观察到Mott-Anderson过渡,形成移动边缘.
- 在V3Al中脱位导致温度独立的电阻率高达700K,达到Mott-Ioffe-Regel极限.
结论:
- 电子带结构和电荷传输可以通过Fe-V-Al化合物的组成变化来定制.
- 莫特-安德森过渡控制了从局部化到非局部化状态的转变.
- 实现的温度独立电阻为稳定的电子设备应用提供了潜力.
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