相关实验视频

Updated: Sep 10, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

基于CNTFET的四级算术电路的节能设计

Ajay Rupani¹, Deepika Bansal², Kulbhushan Sharma³

¹Department of Electronics and Communication Engineering, Manipal University Jaipur, Jaipur, 303007, India.

Scientific reports

|August 27, 2025

概括

这项研究引入了基于碳纳米管场效应晶体管 (CNTFET) 的四元逻辑门,显著降低了功耗并提高了性能. 这些先进的设计为下一代低功耗,高速计算设备提供了有前途的解决方案.

科学领域:

电气工程
计算机工程
材料科学

背景情况:

芯片设计中的互连性增加了面积和功耗.
多价值逻辑为这些挑战提供了潜在的解决方案.
需要新的设计技术来实现高效的多值逻辑.

研究的目的:

设计和评估基于碳纳米管场效应晶体管 (CNTFET) 的标准四元逻辑门.
探索通过晶体管逻辑和电压分离器电路技术,以实现低功耗,高速性能.
在电力消耗,PDP和EDP方面证明拟议设计优于现有设计.

主要方法:

使用CNTFET设计的标准四元逻辑门.
使用过路晶体管逻辑和电压分离器电路技术.
使用32nmCNTFET斯坦福模型模拟的设计.
通过布局和蒙特卡洛模拟研究了区域占用和稳固性.

主要成果:

实现了低平均功耗 (例如,逆变器为31.446nW) 和延迟 (例如,逆变器为7.948ps).
与现有的设计相比,已经证明了优越的功率延迟产品 (PDP) 和能量延迟产品 (EDP).
使用具有竞争力的PDP值的四次倍数 (QMUL) 和四次半倍数 (QHA) 应用程序验证的功能.

结论:

基于CNTFET的四元逻辑门可显著提高功率和速度.
预计新设计方法将提高计算设备的性能.
这些设计具有强度和低空积,使其适用于先进的集成电路.

关键词:

其他国家低功率 MVL 公司噪声边缘四元论逻辑四次乘法器

更多相关视频

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

相关概念视频

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...