通过纳米晶体Cu的高爬行率增强Cu-Cu结合接口
Jian-Yuan Huang1, Dinh-Phuc Tran2, Kang-Ping Lee2
1Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Materials (Basel, Switzerland)
|August 28, 2025
概括
纳米晶体铜 (NC-Cu) 在低温3DIC包装中显著降低了接口空隙. 它的高颗粒边界密度增强了扩散,在Cu-Cu结合的可靠性方面超过了纳米结合铜.
科学领域:
- 材料科学
- 纳米技术
- 半导体制造业
背景情况:
- 三维集成电路 (IC) 包装需要可靠的低温互连.
- 表面空隙是铜-铜 (Cu-Cu) 结合的关键故障机制.
- 控制空隙形成对于先进的包装技术至关重要.
研究的目的:
- 研究纳米晶铜 (NC-Cu) 在低温Cu-Cu结合过程中抑制界面空隙的有效性.
- 量化比较NC-Cu和纳米结合铜 (NT-Cu) 之间的空隙特性.
- 阐明不同铜微结构中空隙形成和抑制背后的机制.
主要方法:
- 纳米晶体铜 (NC-Cu) 的电子沉积,颗粒大小为~89.3 nm.
- 面向111的纳米铜 (NT-Cu) 的制备,颗粒大小为~621.8nm.
- 在200°C和250°C的低温Cu-Cu结合.
- 使用扫描传输电子显微镜 - 高角度环状暗场 (STEM-HAADF) 成像对空隙特征进行定量分析.
主要成果:
- 在200°C时,NC-Cu的空隙面积比率明显低 (1.8%),而NT-Cu的空隙面积比率低 (4.0%).
- NC-Cu的优异性能归因于其高颗粒边界密度,促进了原子扩散和迁移.
- 在250°C时,在Ostwald成熟过程中,空隙总面积的增加表明了新的空隙核,可能是由于残留缺陷.
结论:
- 纳米晶体铜在3DIC包装的低温Cu-Cu粘合中表现出优异的空隙缓解能力.
- 在NC-Cu中高粒度边界密度是提高扩散和抑制低热预算下的空隙形成的关键.
- 了解空隙核化机制对于优化先进包装中的铜互连可靠性至关重要.
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