一个0.049 mm20.5-至-5.8 GHz的LNA 实现基于主动电感器和低容量ESD保护的平坦高收益
Dawei Dong1, Zhenrong Li1, You Quan1
1School of Microelectronics, Xidian University, Xi'an 710126, China.
Micromachines
|August 28, 2025
概括
这项研究介绍了一种使用活性电感器 (AI) 和改进的静电放电 (ESD) 二极管的0.5-5.8GHz低噪声放大器 (LNA). 该LNA实现了优异的增益和低噪声,在射频应用中表现出强大的性能.
科学领域:
- 电气工程
- 微电子设备
- 射频电路设计
背景情况:
- 低噪音放大器 (LNA) 是无线电频率 (RF) 系统中的关键组件.
- 提高LNA性能需要在主动组件和保护电路方面取得进步.
- 过程变化和寄生效应可能会降低LNA的效率.
研究的目的:
- 引入一个新的0.5-5.8 GHzLNA设计.
- 使用基于旋转器的活性电感器 (AI) 和改进的深沟隔离 (DTI) 静电放电二极管 (ESD) 提高LNA性能.
- 分析开发的LNA的增强平度和噪声特性.
主要方法:
- 使用0.18μm SiGe BiCMOS技术设计和制造0.5-5.8 GHz的LNA.
- 集成基于旋转器的活性电感器 (AI) 以实现一致的性能.
- 实施增强的DTI ESD二极管以最大限度地减少寄生电容.
主要成果:
- 在0.5-5.8GHz频段实现了高S21的18.3±0.3dB.
- 最低的噪声值为2.6dB.
- S11和S22的参数保持在-10dB以下,表明阻抗匹配良好.
- 活性电感器在过程,电压,温度 (PVT) 和输入功率变化中显示出出色的一致性.
- 增强的DTI二极管将寄生体容量平均降低8.5%.
结论:
- 开发的LNA表现出高增益和低噪音的卓越性能.
- 整合AI和增强的DTIESD二极管有助于提高LNA的一致性和减少寄生虫.
- LNA适用于要求稳定和高效放大功率的射频应用.
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