带有缓冲器的 GaN HEMT 振荡器

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Updated: Sep 9, 2025

Fabrication and Testing of Microfluidic Optomechanical Oscillators
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Fabrication and Testing of Microfluidic Optomechanical Oscillators

Published on: May 29, 2014

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Sheng-Lyang Jang1, Ching-Yen Huang1, Tzu Chin Yang1

  • 1Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan.

Micromachines
|August 28, 2025
PubMed
概括

这项研究探讨了三种高电子移动性化物晶体管 (GaN-HEMT) 振荡器,改进了可靠,高性能无线电频率电路的设计. 结果显示优化的结构提高了效率和相位噪声, 这对于先进的电子设备至关重要.

关键词:
在 GaN HEMT 功率振荡器缓冲器值得一提的是左手传输线阶段噪声可靠性

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