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在p-GaN HEMT中提高预先可靠性的晶圆门选测试

Giovanni Giorgino^1,2, Cristina Miccoli², Marcello Cioni²

¹Department of Engineering "Enzo Ferrari", Università di Modena e Reggio Emilia, 41125 Modena, Italy.

|August 28, 2025

概括

这项研究引入了一个更快的,在晶圆上的方法来评估p-GaN HEMT的门可靠性. 一种新的表面处理提高了设备的可靠性, 这对于高功率电子设备至关重要.

科学领域:

材料科学
半导体设备物理
可靠性工程

背景情况:

在p-GaN HEMT中,门的强度对于设备的寿命和满足行业标准至关重要.
目前的可靠性测试耗时,通常在包装后进行.
需要更快的晶圆选方法来早期识别潜在的门故障.

研究的目的:

开发和验证p-GaN HEMT门可靠性的快速室温选程序.
评估介电层和表面处理对门预可靠性的有效性.
通过模拟了解门漏水和排水漏水的基本机制.

主要方法:

开发一个室温应力程序来测试晶圆门的可靠性.
使用参考门工艺,介电层工艺和表面处理工艺的设备的比较分析.
使用技术计算机辅助设计 (TCAD) 模拟来调查设备的行为.

主要成果:

在压力下,参考门过程表现出显著的门泄漏降解.
实施介电层提高了门的可靠性,但导致了高排水泄漏.
一个p-GaN表面处理提高了门的预先可靠性,同时保持了低排水泄漏.

结论:

开发的室温选方法在制造过程的早期有效地识别出门的可靠性问题.
表面处理提供了一个有前途的方法来提高p-GaN HEMT门的强度,而不会影响排水泄漏性能.
对于理解设备物理和优化制造过程,TCAD模拟非常有价值.

关键词:

医疗器械美国门的可靠性 p-GaN 在表面处理

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