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Miao Jiang¹, Mingyi Yao¹, Ganlin Song¹

¹Beijing Superstring Academy of Memory Technology, Beijing 100176, China.

|August 28, 2025

概括

调整位置偏差 (APD) 显著影响3D堆叠内存覆盖的准确性,特别是在过程变化. 针对性的对齐标记设计对于优化敏感制造区的性能至关重要.

科学领域:

半导体制造业
先进的计量学
三维集成电路

背景情况:

采用3D堆叠内存需要精确的对齐和覆盖控制以实现多层精度.
测量准确性和对齐标记的稳定性对于最佳的对齐和覆盖性能至关重要.

研究的目的:

系统地调查晶圆质量 (WQ) 和对齐位置偏差 (APD) 对3D结构中的对齐模型残留的贡献.
使用实验和模拟方法分析WQ,APD和覆盖性能之间的相互作用.

主要方法:

调整参数的实验分析.
在3D结构中对齐过程的模拟.
在WQ,APD和重叠性能指标之间的相关性分析.

主要成果:

APD与不可纠正的对齐模型残留物有较强的相关性,特别是在蚀不均等全球工艺变化下.
APD灵敏度在方向上 (X/Y标记) 和空间上 (晶圆边缘与中心) 不同.

结论:

在3D堆叠内存中,APD是影响重叠精度的关键因素.
需要针对工艺敏感区域设计有针对性的调整标记,以减轻APD的影响.
结果为优化半导体制造中的对齐策略和过程监控提供了洞察力.

关键词:

一个APD 美国调整方式调整标记进行覆盖

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