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Updated: May 5, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

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探讨道场效应晶体管:材料,结构和应用

Shupeng Chen1, Yourui An1, Shulong Wang1

  • 1Key Laboratory of Wide Bandgap Semiconductor Materials, Faculty of Integrated Circuit, Ministry of Education, Xidian University, Xi'an 710071, China.

Micromachines
|August 28, 2025
PubMed
概括

道场效应晶体管 (TFET) 为摩尔定律的局限性提供了解决方案,比金属氧化物半导体场效应晶体管 (MOSFET) 能够实现更低的下值波动和更低的功耗. 本文探讨了TFET对未来电子产品的发展.

关键词:
带对带道 (BTBT)小门波动 (SS)道场效应晶体管 (TFET)超低功耗电子设备

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