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对DCAP电源芯片的总电离剂量效应模拟建模和分析

  • 0Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
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2025年八月28日

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2025年八月28日

在PubMed上查看摘要

概括

此摘要是机器生成的。

总剂量辐射降低了直接连接到输出CAPacitor (DCAP) 功率芯片的性能. 带隙参考电路是最敏感的,影响输出电压的准确性和切换频率.

科学领域

  • 半导体设备物理
  • 电子中的辐射效应
  • 集成电路的可靠性

背景情况

  • 电源芯片是电子系统中的关键组件.
  • 辐射环境可能会降低半导体设备的性能.
  • 了解这些影响对于可靠的系统设计至关重要.

研究的目的

  • 在总剂量辐射下系统地研究0.18μmBCD工艺DCAP功率芯片的性能降低.
  • 分析辐射对MOS设备电气特性的影响.
  • 开发和应用一个用于电路级模拟的辐射故障注入模型.

主要方法

  • 在辐射下对MOS设备的电特性进行设备级模拟.
  • 建立总剂量故障注射模型.
  • 使用故障模型对DCAP电源芯片进行电路级模拟.

主要成果

  • 总剂量辐射显著降低了DCAP电源芯片的输出电压准确性.
  • DCAP电源芯片的开关频率也会因总剂量辐射而降低.
  • 波段间隙参考电路被确定为DCAP芯片中最敏感的模块.

结论

  • 这项研究提供了对DCAP电源芯片总辐射剂量影响的全面分析.
  • 带隙参考电路的灵敏度需要集中辐射硬化策略.
  • 这些发现支持了对辐射强化的DCAP电源芯片设计的开发.

关键词:

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