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Updated: May 8, 2026

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在单晶4H-SiC的纳米削中研究表面形态和表面下损伤的演变

Jianpu Xi¹, Xinxing Ban², Zhen Hui³

¹School of Intelligent Mechanical and Electrical Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China.

|August 28, 2025

概括

碳化 (SiC) 的纳米划痕显示出不同的材料去除模式. 即使是光滑的表面也可以隐藏显著的地下损伤,影响半导体设备的可靠性.

科学领域:

材料科学
表面工程
纳米技术

背景情况:

单晶4H碳化 (4H-SiC) 对于先进的半导体设备至关重要.
4H-SiC基板的表面和地下完整性直接影响设备的性能和可靠性.

研究的目的:

在纳米削过程中系统地研究4H-SiC表面形态和地下损伤 (SSD) 的演变.
了解在不同的正常负载下纳米级损伤机制.

主要方法:

在0-100mN的负载下使用钻石伯科维奇尖端的纳米电压器对4H-SiC进行纳米削.
通过扫描电子显微镜 (SEM) 进行表面形态分析.
使用聚焦离子束 (FIB) 切片和传输电子显微镜 (TEM) 进行地表损伤的表征.

主要成果:

确定了三种材料去除模式:柔性 (<14.5 mN),脆性到柔性过渡 (14.5-59.3 mN) 和脆性 (>59.3 mN).
观测到重要的地下损伤,包括裂和脱位集群,即使在平滑表面的过渡区.
一个无形的界面层影响了缺陷核和沿着滑动线的裂传播.

结论:

4H-SiC的纳米划痕显示出负载依赖的材料去除和地下损伤.
对于可靠的基于SiC的半导体设备来说,最大限度地减少地下损坏至关重要.
对纳米损伤机制的洞察对于优化SiC的精密加工至关重要.

关键词:

从脆性转变为柔性移除机制抓伤碳化地下损伤

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