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通过先进的TCAD模拟和动态验证对沟MOSFET进行精确的SPICE模拟

Ammar Tariq¹, Giovanni Minardi², Valeria Cinnera Martino²

¹Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences (MIFT), University of Messina, 98166 Messina, Italy.

|August 28, 2025

概括

本研究引入了一种虚拟工作流程,用于使用TCAD模拟提取功率MOSFET的SPICE模型,从而消除了对物理原型的需求. 这加快了设计周期,提高了动态特征的准确性.

科学领域:

电气工程
半导体设备物理
计算电子

背景情况:

传统的电源 MOSFET SPICE 模型提取主要依赖于实验性数据,通常需要多次昂贵的原型代.
在制造前优化设备性能和确保精确的电气参数是半导体设计的一个重大挑战.
在没有物理验证的情况下,现有的模拟方法可能缺乏精确的动态特征预测所需的准确性.

研究的目的:

提供一种全新的,完全虚拟的方法来提取功率MOSFET的精确SPICE模型.
使设计人员能够优化设备性能,并仅从TCAD模拟中提取电气参数.
绕过初始原型的必要性,从而减少开发时间和成本.

主要方法:

使用先进的 TCAD (技术计算机辅助设计) 工具来生成现实的功率 MOSFET 设备结构.
直接从TCAD模拟中获得关键的电气特性.
基于模拟数据进行精确的SPICE模型提取和宏模型集成.
在TCAD和SPICE环境中使用网关充电测试来动态验证提取的SPICE模型.

主要成果:

在TCAD和SPICE模拟测试中实现了优异的一致性,Q_gs和Q_gd的误差低于2%.
在硬件制造之前表现出产生高度忠实的设备模拟的能力.
成功提取了功率MOSFET的精确电气参数,包括用于e-fuse的电气参数.

结论:

拟议的虚拟流程有效地绕过了在功率MOSFET开发中的初始原型的需求.
这种创新方法极大地加快了设计过程,并降低了与原型设计和重新设计相关的成本.
该方法提高了短暂和动态特征的准确性,这对于MOSFET在特定应用中至关重要,例如电子保险丝.

关键词:

在 PowerMOS 在SPICE模型中在 UTMOST IV 一个装置一个过程这是一场胜利

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