Jiaqi Han1, Hongchen Mao2, Ya Lin1

  • 1State Key Laboratory of Integrated Optoelectronics, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun, 130024, P. R. China.

概括

本研究引入了一种新近红外 (NIR) 光电子记忆器,使用 ZnO 上转换纳米粒子进行全光学调制. 这一突破使双向光响应, 推进神经形态视觉和低功耗计算应用.