用于大脑启发的高性能图像传感器的两极欧姆接触
Haoran Sun1, Penghao Chen1, Ziyu Ming1
1State Key Laboratory of Integrated Chips and Systems, College of Integrated Circuits and Micro-Nano Electronics, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Nature communications
|August 28, 2025
概括
研究人员为开发了一种新的双极欧姆接触,使得电子和孔运输效率高. 这一突破推动了脑启发的图像传感器和内存计算, 实现快速识别任务.
科学领域:
- 材料科学
- 半导体设备物理
- 神经形态工程
背景情况:
- 两极半导体设备为大脑启发的图像传感器提供了优势,但由于Schottky接触,它们面临着制造方面的挑战和性能限制.
- 现有的CMOS技术使用适合单载体传输的欧姆接触,不适合双极装置的同时电子和孔导.
研究的目的:
- 开发一种与CMOS技术兼容的双极欧姆接触器.
- 在双极装置中实现有效的电子和孔的同时传输.
- 展示这种新接触在先进的神经形态硬件中的应用.
主要方法:
- 为设计了一个互补的欧姆接触配置 (COCC).
- 确保CMOS兼容性,用于晶圆尺度设备阵列的制造.
- 将COCC集成到内存传感和计算图像传感器中.
主要成果:
- 使用COCC实现了有效的电子和孔的同时传输.
- 使用CMOS技术证明了晶圆尺度的制造性.
- 图像传感器处理了MNIST数据集上的光学数据,识别任务在7.3 ns以下完成 (不包括外围电路限制).
- 应用COCC来创建可重新配置的卷积内核和突触/神经元类电路.
结论:
- 拟议的 COCC 克服了 Schottky 和常规欧姆接触器的局限性.
- 这项创新有助于开发高性能,CMOS兼容,晶圆尺度的大脑图像传感器和神经形态计算硬件.
- COCC可以实现更快,更高效的内存传感和计算应用.
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