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Updated: Sep 9, 2025

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大面积单层p型半导体片对高性能电器阵列

Lingxiao Yu1, Junyang Tan2, Hanyuan Ma1

  • 1State Key Laboratory of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.

Advanced materials (Deerfield Beach, Fla.)
|August 29, 2025
PubMed
概括

现在可以实现大面积,高质量的二维p型半导体. 可控核化使得先进电子设备的单层化 (WSe2) 薄膜能够达到厘米尺度.

关键词:
加入NbWSe2 其他电气设备中核化p型半导体

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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